Designing and simulation SOI MOSFET transistorsto enhance DIBL parameterand improveself-thermal effects

Samad GHALANDARİ, Hossein BAHRAMİ, Hasti ABBASİ, Gholamreza KARİMİ
1.917 681

Abstract


Abstract. In this study, a new structure for FD SOI MOSFET has been presented toimprove DIBL parameter and also to enhance self-heating effect. The main idea of this structure is to change the thickness of BOX layer in transistor in order to improve DIBL parameter and self-heating effect.


Keywords


Self-Heating Effect, FD SOI MOSFET, DIBL

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References


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